Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR· Gold metallization realizes very stable characteristics and excellent lifetime· Multicell geometry gives good balance of diss...
LV2024E45R: Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR· Gold metallization realiz...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. |
UNIT |
VCBO | collector-base voltage | open emitter | - | 40 | V |
VCER | collector-emitter voltage | RBE = 47W | - | 20 | V |
VCBO | collector-emitter voltage | open base | - | 15 | V |
VEBO | emitter-base voltage | open collector | - | 3 | V |
IC | collector current (DC) | - | 2 | A | |
Ptot | total power dissipation | Tmb £ 75 °C | - | 18 | W |
Tstg | storage temperature | -65 | +200 | °C | |
Tj | operating junction temperature | - | 200 | °C | |
Tsld | soldering temperature | at 0.1 mm from case; t £ 10 s | - | 250 | °C |