Photodetector Transistors Phototrans Filtered
LTR-4206E: Photodetector Transistors Phototrans Filtered
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Maximum Power Dissipation : | 100 mW | Maximum Dark Current : | 100 nA |
Package / Case : | T-1 |
Parameter | Maximum Rating | Unit |
Power Dissipation | 100 | mW |
Collector-Emitter Voltage | 30 | V |
Emitter-Collector Voltage | 5 | V |
Operating Temperature Range | -40 to +85 | |
Storage Temperature Range | -55 to +100 | |
Lead Soldering Temperature [1.6mm (.063 in.) from body] |
260 for 5 Seconds |
The LTR-4206 series consist of a NPN silicon phototransistor mounted in a lensed, clear plastic, end looking package. The lensing effect of the package allows an acceptance half angle of 10° measured from the optical axis to the half power point. This series is mechanically and spectrally matched to the LTE-4206 series of infrared emitting diodes. The LTR-4206E is a special dark plastic package that cut the visible light and suitable for the detectors of infrared application.
Technical/Catalog Information | LTR-4206E |
Vendor | Lite-On Inc |
Category | Sensors, Transducers |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Current - Collector (Ic) (Max) | 4.8mA |
Current - Dark (Id) (Max) | 100nA |
Power - Max | 100mW |
Orientation | Top View |
Mounting Type | Through Hole |
Package / Case | T-1 |
Wavelength | 940nm |
Viewing Angle | 20° |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | LTR 4206E LTR4206E 160 1030 ND 1601030ND 160-1030 |