Photodetector Transistors Phototransistor PTX 5mm, Filtr
LTR-3208E: Photodetector Transistors Phototransistor PTX 5mm, Filtr
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Maximum Power Dissipation : | 100 mW | Maximum Dark Current : | 100 nA |
Package / Case : | T-1 3/4 |
Parameter | Maximum Rating100 | Unit |
Power Dissipation | 100 | mW |
Collector-Emitter Voltage | 30 | V |
Emitter-Collector Voltage | 5 | V |
Operating Temperature Range | -40°C to +85°C | |
Storage Temperature Range | -55 °Cto +100°C | |
Lead Soldering Temperature [1.6mm (.063 in.) from body] |
260°C for 5 Seconds |
The LTR-3208 series consist of a NPN silicon phototransistor mounted in a lensed, clear plastic, end looking package. The lensing effect of the package allows an acceptance half angle of 10 measured from the optical axis to the half power point. This series is mechanically and spectrally matched to the LTE-3271T/ LTE-3371T series of infrared emitting diodes. The LTR- 3208E is a special dark plastic package that cut the visible light and suitable for the detectors of infrared application.
Technical/Catalog Information | LTR-3208E |
Vendor | Lite-On Inc |
Category | Sensors, Transducers |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Current - Collector (Ic) (Max) | 3.12mA |
Current - Dark (Id) (Max) | 100nA |
Power - Max | 100mW |
Orientation | Top View |
Mounting Type | Through Hole |
Package / Case | T 1 3/4 |
Wavelength | 940nm |
Viewing Angle | 20° |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | LTR 3208E LTR3208E 160 1031 ND 1601031ND 160-1031 |