Photodetector Transistors Phototrans Clear
LTR-3208: Photodetector Transistors Phototrans Clear
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Maximum Power Dissipation : | 100 mW | Package / Case : | T-1 3/4 |
Parameter | Maximum Rating100 | Unit |
Power Dissipation | 100 | mW |
Collector-Emitter Voltage | 30 | V |
Emitter-Collector Voltage | 5 | V |
Operating Temperature Range | -40°C to +85°C | |
Storage Temperature Range | -55 °Cto +100°C | |
Lead Soldering Temperature [1.6mm (.063 in.) from body] |
260°C for 5 Seconds |
The LTR-3208 series consist of a NPN silicon phototransistor mounted in a lensed, clear plastic, end looking package. The lensing effect of the package allows an acceptance half angle of 10 measured from the optical axis to the half power point. This series is mechanically and spectrally matched to the LTE-3271T/ LTE-3371T series of infrared emitting diodes. The LTR- 3208E is a special dark plastic package that cut the visible light and suitable for the detectors of infrared application.