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LTC5530

Features: `Temperature Compensated Internal Schottky Diode RF Detector`Wide Input Frequency Range: 300MHz to 7GHz*`Wide Input Power Range: 32dBm to 10dBm`Buffered Detector Output with External Gain Control`Low Starting Voltage: 120mV ±35mV for Gain = 2X`Wide VCC Range of 2.7V to 6V`Low Operating C...

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SeekIC No. : 004402632 Detail

LTC5530: Features: `Temperature Compensated Internal Schottky Diode RF Detector`Wide Input Frequency Range: 300MHz to 7GHz*`Wide Input Power Range: 32dBm to 10dBm`Buffered Detector Output with External Gain ...

LTC5530 Data Sheet

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Part Number:
LTC5530
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

`Temperature Compensated Internal Schottky Diode RF Detector
`Wide Input Frequency Range: 300MHz to 7GHz*
`Wide Input Power Range: 32dBm to 10dBm
`Buffered Detector Output with External Gain Control
`Low Starting Voltage: 120mV ±35mV for Gain = 2X
`Wide VCC Range of 2.7V to 6V
`Low Operating Current: 500A
`Low Shutdown Current: <2A
`Available in a Low Profile (1mm) SOT-23 Package


Application

· 802.11a, 802.11b, 802.11g, 802.15, 802.16
·Optical Data Links
· Wireless Data Modems
· Wireless and Cable Infrastructure
· RF Power Alarm
· Envelope Detector


Pinout

Connection Diagram


Specifications

VCC, VOUT, SHDN, VM ............................................ 0.3V to 6.5V
RFIN Voltage ..................................................(VCC ± 1.5V) to 7V
RFIN Power (RMS) ............................................................. 12dBm
IVOUT ..................................................................................... 5mA
Operating Temperature Range (Note 2) ........... 40°C to 85°C
Maximum Junction Temperature ........................................ 125°C
Storage Temperature Range ................ .............. 65°C to 150°C
Lead Temperature (Soldering, 10 sec)................................ 300°C


Description

The LTC®5530 is an RF power detector for RF applications perating in the 300MHz to 7GHz range. A temperature ompensated Schottky diode peak detector and buffer  amplifier are combined in a small ThinSOTTM package. The supply voltage range is optimized for operation from a single lithium-ion cell or 3xNiMH.

The RF input voltage is peak detected using an on-chip Schottky diode. The detected voltage is buffered and supplied to the VOUT pin. The output buffer gain is set via external resistors. A power saving shutdown mode reduces current to less than 2A.

The LTC5530 operates with input power levels from 32dBm to 10dBm.




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