Features: `Fully Enhances N-Channel Power MOSFETs`8A Standby Current`85A On Current`Short-Circuit Protection`Wide Power Supply Range: 4.5V to 18V`Controlled Switching On nand OFF Times`No External Charge Pump Components`Replaces P-Channel High Side MOSFETs`Compatible with Standard Logic Families`A...
LTC1155: Features: `Fully Enhances N-Channel Power MOSFETs`8A Standby Current`85A On Current`Short-Circuit Protection`Wide Power Supply Range: 4.5V to 18V`Controlled Switching On nand OFF Times`No External C...
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The LTC®1155 dual high side gate driver allows using low cost N-channel FETs for high side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no external components. Micropower operation, with 8A standby current and 85mA operating current, allows use in virtually all systems with maximum efficiency.
Included on-chip is overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can be added in series with the current sense to prevent false triggering on high in-rush loads such as capacitors and incandescent lamps.
The LTC1155 operates off of a 4.5V to 18V supply input and safely drives the gates of virtually all FETs. The LTC1155 is well suited for low voltage (battery-powered) applications, particularly where micropower "sleep" operation is required.
The LTC1155 is available in both 8-pin PDIP and 8-pin SO packages.