LT508-S6

The LT508-S6 is designed as one kind of Silicon transistor device that is available in a PICOmini surface mount package with enhanced specifications designed for applications requiring high gain and low noise.

The absolute maximum ratings of the LT508-S6 can be summarized as:(1)Collector-Base Voltage: 50 V;(2)Collector-Emitter Voltage: 50 V;(3)Emitter-Base Voltage: 5.0 V;(4)Collector Current: 100 mA;(5)Power Dissipation: 350 mW;(6)Operating and Storage: -65 to +150 ;(7)Junction Temperature: -65 to +150 ;(8)Thermal Resistance: 357 /W.

The electrical characteristics of this device can be summarized as:(1)ICBO: 50 nA;(2)IEBO: 50 nA;(3)BVCBO: 50 to 150 V;(4)BVCEO: 50 to 105 V;(5)BVEBO: 5.0 to 7.5 V;(6)VCE(SAT): 45 to 100 mV.etc. If you want to know more information such as the electrical characteristics about the LT508-S6, please download the datasheet in www.seekic.com or www.chinaicmart.com.