LT1002

Features:

Guaranteed low offset voltage LT1002A 60mV max LT1002 100mV max
Guaranteed offset voltage match LT1002A 40mV max LT1002 80mV max
Guaranteed low drift LT1002A 0.9mV/°C max LT1002 1.3mV/°C max
Guaranteed CMRR LT1002A 110dB min LT1002 110dB min
Guaranteed channel separation LT1002A 132dB min LT1002 130dB min
Guaranteed maching characteristics n Low noise 0.35mV p-p


Application

Thermocouple Amplifiers
Strain Gauge Amplifiers
Low level signal processing
Medical instrumentation
Precision dual limit threshold detection
Instrumentation amplifiers


Pinout




Specifications

Parameter	Symbol	Ratings	Units
Repetitive Peak Reverse Voltage	VRRM	1200	V
Working Peak Reverse Voltage	VRWM	1200	V
DC Blocking Voltage	VR	1200	V
Average Rectified Forward Current (TC = 80oC)	IF(AV)	30	A
Repetitive Peak Surge Current (20kHz Square Wave)	IFRM	70	A
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)	IFSM	325	A
Power Dissipation	PD	166	W
Avalanche Energy (1A, 40mH)	EAVL	20	mJ
Operating and Storage Temperature Range	TJ, TSTG	-55 to 150	°C
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Application Note AN-7528	TL TPKG	300 260	°C °C
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

The LT®1002 dual, matched precision operational amplifiers combine excellent individual amplifier performance with tight matching and temperature tracking between amplifiers. In the design, processing, and testing of the device, particular attention has been paid to the optimization of the entire distribution of several key parameters and their matching. Consequently, the specifications of even the low cost commercial grade (the LT1002C) have been spectacularly improved compared to presently available devices.Essentially, the input offset voltage of all units is less than 80mV, and matching between amplifiers is consistently beter than 60mV (see distribution plot below). Input bias and offset currents, channel separation, common mode and power suply rejections of the LT1002C are all specified at levels which were previsouly attainable only on very expensive, selected grades of other dual devices.

Power dissipation is nearly halved compared to the most popular precision duals, without adversely affecting noise or speed performance. A by-product of lower dissipation is decreased warm-up drift. For even better performance in a single precision op amp, refer to the LT1001 data sheet. A bridge signal conditioning application is shown below. This circuit illustrates the requirement for both excellent matching and individual amplifier specifications.