Position: Home  > All Categories> Integrated Circuits (ICs) > LRS1341

LRS1341

Features: • Flash Memory and SRAM• Stacked Die Chip Scale Package• 72-ball CSP (FBGA072-P-0811) plastic package• Power supply: 2.7 V to 3.6 V• Operating temperature: -25°C to +85°C• Flash Memory Access time (MAX.): 100 ns Operating current (MAX.):The current for...

product image

LRS1341 Picture
See larger image
SeekIC No. : 004399497 Detail

LRS1341: Features: • Flash Memory and SRAM• Stacked Die Chip Scale Package• 72-ball CSP (FBGA072-P-0811) plastic package• Power supply: 2.7 V to 3.6 V• Operating temperature: -2...

LRS1341 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
LRS1341
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/20

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Flash Memory and SRAM
• Stacked Die Chip Scale Package
• 72-ball CSP (FBGA072-P-0811) plastic package
• Power supply: 2.7 V to 3.6 V
• Operating temperature: -25°C to +85°C
• Flash Memory
Access time (MAX.): 100 ns
Operating current (MAX.):
The current for F-VCC pin
Read: 25 mA (tCYCLE = 200 ns)
Word write: 17 mA
Block erase: 17 mA
Deep power down current (the current for
F-VCC pin): 10 A (MAX. F-CE F-VCC - 0.2 V,
F-RP -0.2 V, F-VPP 0.2 V)
Optimized array blocking architecture
Two 4K-word boot blocks
Six 4K-word parameter blocks
Thirty-one 32K-word main blocks
Top/Bottom boot location versions
Extended cycling capability
100,000 block erase cycles
Enhanced automated suspend options
Word write suspend to read
Block erase suspend to word write
Block erase suspend to read
• SRAM
Access time (MAX.): 85 ns
Operating current (MAX.):
45 mA
8 mA (tRC, tWC = 1 s)
Standby current: 45 A (MAX.)
Data retention current: 35 A (MAX.)


Specifications

PARAMETER

SYMBOL

RATINGS

UNIT

NOTES

Supply voltage

VCC

-0.2 to +3.9

V

1, 2

Input voltage

VIN

-0.2 to VCC +0.3

V

1, 3, 4

Operating temperature

TOPR

-25 to +85

 

Storage temperature

TSTG

-55 to +125

 

F-VPP voltage

F-VPP

-0.2 to +14.0

V

1, 4, 5

F-RP voltage

F-RP

-0.5 to +14.0

V

1, 4, 5

NOTES:
1. The maximum applicable voltage on any pins with respect to GND.
2. Except F-VPP.
3. Except F-RP.
4. -2.0 V undershoot is allowed when the pulse width is less than 20 ns.
5. +14.0 V overshoot is allowed when the pulse width is less than 20 ns.


Description

The LRS1341/LRS1342 is a combination memory organized as 1,048,576 × 16-bit flash memory and 131,072 × 16-bit static RAM in one package.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
RF and RFID
X3C26P1-30S
1P620S
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Optoelectronics
SFH7770
TLP423J
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Kits
IT243
UVSC-110-4E1
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
View more