LRS1341 Selling Leads, Price trend, LRS1341 DataSheet download, circuit diagram from SeekIC.com

Features: • Flash Memory and SRAM• Stacked Die Chip Scale Package• 72-ball CSP (FBGA072-P-0811) plastic package• Power supply: 2.7 V to 3.6 V• Operating temperature: -25°C to +85°C• Flash Memory Access time (MAX.): 100 ns Operating current (MAX.):The current for...

See larger image

SeekIC No. : 004399497 Detail

LRS1341: Features: • Flash Memory and SRAM• Stacked Die Chip Scale Package• 72-ball CSP (FBGA072-P-0811) plastic package• Power supply: 2.7 V to 3.6 V• Operating temperature: -2...

LRS1341 Data Sheet

Get Latest Price

Part Number:: LRS1341
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Product Details

Description

Features:

• Flash Memory and SRAM
• Stacked Die Chip Scale Package
• 72-ball CSP (FBGA072-P-0811) plastic package
• Power supply: 2.7 V to 3.6 V
• Operating temperature: -25°C to +85°C
• Flash Memory
Access time (MAX.): 100 ns
Operating current (MAX.):
The current for F-V_CC pin
Read: 25 mA (t_CYCLE = 200 ns)
Word write: 17 mA
Block erase: 17 mA
Deep power down current (the current for
F-V_CC pin): 10 A (MAX. F-CE F-V_CC - 0.2 V,
F-RP -0.2 V, F-VPP 0.2 V)
Optimized array blocking architecture
Two 4K-word boot blocks
Six 4K-word parameter blocks
Thirty-one 32K-word main blocks
Top/Bottom boot location versions
Extended cycling capability
100,000 block erase cycles
Enhanced automated suspend options
Word write suspend to read
Block erase suspend to word write
Block erase suspend to read
• SRAM
Access time (MAX.): 85 ns
Operating current (MAX.):
45 mA
8 mA (tRC, tWC = 1 s)
Standby current: 45 A (MAX.)
Data retention current: 35 A (MAX.)

Specifications

PARAMETER	SYMBOL	RATINGS	UNIT	NOTES
Supply voltage	V_CC	-0.2 to +3.9	V	1, 2
Input voltage	V_IN	-0.2 to V_CC +0.3	V	1, 3, 4
Operating temperature	T_OPR	-25 to +85
Storage temperature	T_STG	-55 to +125
F-VPP voltage	F-VPP	-0.2 to +14.0	V	1, 4, 5
F-RP voltage	F-RP	-0.5 to +14.0	V	1, 4, 5

NOTES:
1. The maximum applicable voltage on any pins with respect to GND.
2. Except F-VPP.
3. Except F-RP.
4. -2.0 V undershoot is allowed when the pulse width is less than 20 ns.
5. +14.0 V overshoot is allowed when the pulse width is less than 20 ns.

Description

The LRS1341/LRS1342 is a combination memory organized as 1,048,576 × 16-bit flash memory and 131,072 × 16-bit static RAM in one package.

LRS1341

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Fans, Thermal Management(2427)

Discrete Semiconductor Products(7459)

Undefined Category(248)

Capacitors(4587)

Test Equipment(3237)

Transformers(1503)