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LR401

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 230Watts 0.75 /W 200 -65 to 150 13.5A 70V 70V ...

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SeekIC No. : 004399401 Detail

LR401: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolta...

LR401 Data Sheet

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Part Number:
LR401
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Specifications

Total
Device
Dissipation

Junction to
Case Thermal
Resistance

Maximum
Junction
Temperature

Storage
Temperature

DC Drain
Current

Drain to
Gate
Voltage

Drain to
Source
Voltage

Gate to
Source
Voltage

230Watts

0.75 /W

200

-65 to 150

13.5A

70V

70V

20V






Description

Silicon VDMOS and LDMOS transistors LR401 designed specifically for broadband RF applications.

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet" TMprocess features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.




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