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LQ801

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 80Watts 1.80 /W 200 -65 to 150 4.5A 70V 70V 2...

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LQ801: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVolta...

LQ801 Data Sheet

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Part Number:
LQ801
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Total
Device
Dissipation

Junction to
Case Thermal
Resistance

Maximum
Junction
Temperature

Storage
Temperature

DC Drain
Current

Drain to
Gate
Voltage

Drain to
Source
Voltage

Gate to
Source
Voltage

80Watts

1.80 /W

200

-65 to 150

4.5A

70V

70V

20V






Description

·Silicon VDMOS and LDMOS transistors LQ801 designed specifically for broadband RF applications.

·Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

·"Polyfet" TMprocess features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.




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