LPV1500

Features: · +31.5 dBm Typical Power at 18 GHz· 8.5 dB Typical Power Gain at 18 GHz· +27 dBm at 3.3V Battery Voltage· +45 dBm Typical Intercept Point· 50% Power-Added-Efficiency at 18 GHz· Plated Source Thru-ViasApplication`Applications Notes are available from your local FSS Sales Representative, ...

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SeekIC No. : 004399276 Detail

LPV1500: Features: · +31.5 dBm Typical Power at 18 GHz· 8.5 dB Typical Power Gain at 18 GHz· +27 dBm at 3.3V Battery Voltage· +45 dBm Typical Intercept Point· 50% Power-Added-Efficiency at 18 GHz· Plated Sou...

floor Price/Ceiling Price

Part Number:
LPV1500
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

· +31.5 dBm Typical Power at 18 GHz
· 8.5 dB Typical Power Gain at 18 GHz
· +27 dBm at 3.3V Battery Voltage
· +45 dBm Typical Intercept Point
· 50% Power-Added-Efficiency at 18 GHz
· Plated Source Thru-Vias



Application

`Applications Notes are available from your local FSS Sales Representative, or directly from the factory. Complete design data, including S-parameters, Noise data, and Large-Signal models, is available on 3.5" diskette, or may be down-loaded from our Web Page.


Specifications

Symbol

Parameter

RATING1

VDS

Drain-Source Voltage

+12V

VGS

Gate-Source Voltage

-5V

IDS

Drain-Source Current

2 x IDSS

IG

Gate Current

70 mA

PIN

RF Input Power

750 mW

TCH

Channel Temperature

+175

TSTG

Storage Temperature

-65/175

PT

Power Dissipation

3.33W3,4

NOTES:
1. Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
2. Recommended Continuous Operating Limits should be observed for reliable device operation.
3. Power Dissipation defined as: PT º (PDC + PIN) - POUT, where: PDC = DC bias power, POUT = RF output power, and
PIN = RF input power.
4. Power Dissipation to be de-rated as follows:
5. Specifications subject to change without notice.



Description

`The LPV1500 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High
Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25 m by 1500 m Schottky barrier gate.
The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP1V500 also features Si3N4 passivation and is available in a flanged ceramic package (P100). The LPV1500 features plated source thru-vias for improved
performance.

`Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink
transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. The LP1500 may be procured in a variety of grades, depending upon specific user requirements. Standard lot screening is
patterned after MIL-STD-19500, JANC grade. Space-level screening to FSS JANS grade is also available.


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