Series: -
Transistor Type: NPN
Mounting Type: Surface Mount
Noise Figure (dB Typ @ f): -
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 4V
Package / Case: Die
Supplier Device Package: Die
Manufacturer: Skyworks Solutions Inc
Frequency - Transition: 16GHz
Gain: 5.2dB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 2V
Packaging: Tray - Waffle
Features: ·Low 1/f noise: -142 dBc/Hz at 100 Hz offset
· Phase noise: -167 dBc/Hz at 100 kHz offset
·Output power up to +13 dBm
·Operation down to 1 volt, 2 mA
·Gold bump pads for wire bond or flip chip (for direct die attachment)Application`Low phase noise oscillators up to 16 GHz
` VCO's, DRO's and YIG oscillators
` Point-to-point radios
` Satellite communications
`Fiber optics, OC-192 and OC-768
` Local Multipoint Distribution Systems, LMDSSpecifications
|
Symbol |
Parameter |
Min. |
Max. |
Unit |
|
VCBO |
Collector to Base Voltage |
|
+13.0 |
V |
|
VCEO |
Collector to Emitter Voltage |
|
+4.0 |
V |
|
VEBO |
Emitter to Base Voltage |
|
+1.5 |
V |
|
IC |
Collector Current |
|
80 |
mA |
|
IB |
Base Current |
|
2.0 |
mA |
|
PT |
Total Power Dissipation |
|
250 |
mW |
|
Tj |
Junction Temperature |
|
+150 |
|
|
TSTG |
Storage Temperature |
-65 |
+150 |
|
Description·The LPT16ED is a silicon germanium low phase noise, high frequency NPN transistor for oscillator applications up to 16GHz.
·The LPT16ED exhibits low 1/f noise and provides +13 dBm typical output power at VCE of 3V and IC equal to 20 mA. It is easily operated from a single supply voltage with appropriate external passive components.
·The silicon germanium technology used in this device provides outstanding high-frequency performance combined with high thermal conductivity and superior reliability under harsh operating and storage conditions.
·A complete mechanical description of the transistor is available under SiGe Semiconductor Document 07MS001.
LPT16ED Data Sheet
