LPS200P70 Selling Leads, Price trend, LPS200P70 DataSheet download, circuit diagram from SeekIC.com

Features: 0.7 dB Noise Figure at 12 GHz 12 dB Associated Gain at 12 GHz 0.6 dB Noise Figure at 2 GHz 14 dB Associated Gain at 2 GHz Low DC Power ConsumptionApplicationTypical applications include low noise receiver preamplifiers for commercial applications includingCellular/PCS systems and broad ...

See larger image

SeekIC No. : 004399239 Detail

LPS200P70: Features: 0.7 dB Noise Figure at 12 GHz 12 dB Associated Gain at 12 GHz 0.6 dB Noise Figure at 2 GHz 14 dB Associated Gain at 2 GHz Low DC Power ConsumptionApplicationTypical applications include l...

LPS200P70 Data Sheet

Get Latest Price

Part Number:: LPS200P70
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/11/20

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Product Details

Description

Features:

0.7 dB Noise Figure at 12 GHz
12 dB Associated Gain at 12 GHz
0.6 dB Noise Figure at 2 GHz
14 dB Associated Gain at 2 GHz
Low DC Power Consumption

Application

Typical applications include low noise receiver preamplifiers for commercial applications includingCellular/PCS systems and broad band commercial instrumentation

Specifications

Parameter	Symbol	Test Conditions	Min	Max	Units
Drain-Source Voltage	V_DS	TAmbient = 22 ± 3 °C		4	V
Gate-Source Voltage	V_GS	TAmbient = 22 ± 3 °C		-2	V
Drain-Source Current	I_DS	TAmbient = 22 ± 3 °C		IDSS	mA
Gate Current	I_G	TAmbient = 22 ± 3 °C		2	mA
RF Input Power	P_IN	TAmbient = 22 ± 3 °C		50	mW
Channel Operating Temperature	T_CH	TAmbient = 22 ± 3 °C		175	ºC
Storage Temperature	T_STG	-	-65	175	ºC
Total Power Dissipation	P_TOT	TAmbient = 22 ± 3 °C		300	mW

Description

The LPS200P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide(AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing anElectron-Beam direct-write 0.25 mm by 200 mm Schottky barrier gate. The recessed "mushroom"Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structureand processing have been optimized for high dynamic range. The LPS200's active areas arepassivated with Si3N4, and the P70 ceramic package is ideal for low-cost, high-performanceapplications that require a surface-mount package.

LPS200P70

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Tools(7611)

Cable Assemblies(5)

Computers, Office - Components, Accessories(4539)

Kits(573)

Sensors, Transducers(2877)

Batteries, Chargers, Holders(975)