LPD3330

      The LPD3330 series are designed as silicon planar P/N photodiodes incorporated in plastic package that simultaneously serve as filter and are also transparent for infrared emission.Their terminals are soldering tabs arranged in 2.54mm center to center spacing due to their design.The diodes can vertically be assembled on pc boards.Arrays can be realized by multiple arrangement.Versatile photodetectors are suitable for diodes as well as voltaic cell operation.The signal noise ratio is particularly favorable even at low illuminance.The P/N photodiode are outstanding for low junction capacitance, high cut-off frequency and fast switching times. They are particularly suitable for IR sound transmission and remote control.The cathode of LPD3330 photodiode is marked by a stamping on the package edge.
      Some absolute maximum ratings (Ta = 25°C unless otherwise specified) of LPD3330 have been concluded into several points as follow.The first one is about its reverse break down voltage which would be 30V.The second one is about its power dissipation which would be 15 mW.The third one is about its operating temperature which would be from -30 to +60 °C.The fourth one is about its storage temperature which would be from -40 to +60°C.
      Also there are some electrical characteristics (Ta = 25°C unless otherwise specified) about LPD3330.The first one is about its dark current which would be typ 1.0nA and max 30nA with condition of Vr= 10V, Ee=0mW/cm2.The second one is about its short circuit current which would be min 1.5uA and typ 2.0uA with condition of Vr= 5V, P=940nm, Ee=0.5mW/cm2.The third one is about its open circuit voltage which would be typ 350mV with condition of P=940nm, Ee=0.5mW/cm2.The fourth one is about its total capacutance which would be typ 20pF with condition of Vr=3V, f=1MHZ, Ee=0mW/cm2.The fifth one is about its peak wavelength of max sensitivity which would be typ 940nm.The sixth one is about its rise rime and fall time which would be typ 50nS with condition of Vr=10V, RL=1K.And so on.For more information please contact us.