LPC662 Selling Leads, Price trend, LPC662 DataSheet download, circuit diagram from SeekIC.com

Features: ` Rail-to-rail output swing`Micropower operation (<0.5 mW)`Specified for 100 kW and 5 kW loads` High voltage gain 120 dB` Low input offset voltage 3 mV`Low offset voltage drift 1.3 V/` Ultra low input bias current 2 fA` Input common-mode includes GND` Operating range from +5V to +15V`...

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SeekIC No. : 004399114 Detail

LPC662: Features: ` Rail-to-rail output swing`Micropower operation (<0.5 mW)`Specified for 100 kW and 5 kW loads` High voltage gain 120 dB` Low input offset voltage 3 mV`Low offset voltage drift 1.3 V/` ...

LPC662 Data Sheet

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Part Number:: LPC662
Supply Ability:: 5000

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Product Details

Description

Features:

` Rail-to-rail output swing
`Micropower operation (<0.5 mW)
`Specified for 100 kW and 5 kW loads
` High voltage gain 120 dB
` Low input offset voltage 3 mV
`Low offset voltage drift 1.3 V/
` Ultra low input bias current 2 fA
` Input common-mode includes GND
` Operating range from +5V to +15V
` Low distortion 0.01% at 1 kHz
` Slew rate 0.11 V/s
` Full military temperature range available

Application

·High-impedance buffer
· Precision current-to-voltage converter

Pinout

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Differential Input Voltage ±Supply Voltage
Supply Voltage (V⁺ − V⁻) 16V
Output Short Circuit to V⁺ (Note 11)
Output Short Circuit to V⁻ (Note 1)
Lead Temperature
(Soldering, 10 sec.) 260
Storage Temp. Range −65 to +150
Junction Temperature 150
ESD Rating
(C = 100 pF, R = 1.5 kW) 1000V
Power Dissipation (Note 2)
Current at Input Pin ±5 mA
Current at Output Pin ±18 mA
Current at Power Supply Pin 35 mA
Voltage at Input/Output Pin (V⁺) + 0.3V, (V⁻) −0.3V

Specifications

Supply Min	5 Volt
Supply Max	15 Volt
Gain Bandwidth	0.35 MHz
Offset Voltage max, 25C	6, 3 mV
Max Input Bias Current	0.004 nA
Channels	2 Channels
Supply Current Per Channel	0.043 mA
PowerWise Rating 2	122.9 uA/MHz
Input OutputType	Vcm to V-, R-R Out
Slew Rate	0.11 Volts/usec
Output Current	21 mA
Shut down	No
Voltage Noise	42 nV/root(Hz)
Special Features	Undefined
Temperature Min	-40 deg C
Temperature Max	85 deg C
Function	Op Amp
View Using Catalog

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Differential Input Voltage ±Supply Voltage
Supply Voltage(V⁺ − V⁻) 16V
Output Short Circuit to V⁺ (Note 11)
Output Short Circuit to V⁻ (Note 1)
Lead Temperature
(Soldering, 10 sec.) 260
Storage Temp. Range −65 to +150
Junction Temperature 150
ESD Rating
(C = 100 pF, R = 1.5 kW) 1000V
Power Dissipation (Note 2)
Current at Input Pin ±5 mA
Current at Output Pin±18 mA
Current at Power Supply Pin 35 mA
Voltage at Input/Output Pin(V⁺) + 0.3V, (V⁻) −0.3V

Description

The LPC662 CMOS Dual operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltage from +5V to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input V_OS, drift, and broadband noise as well as voltage gain (into 100 k and 5 k) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5 mW.

This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.

See the LPC660 datasheet for a Quad CMOS operational amplifier and LPC661 for a single CMOS operational amplifier with these same features.

Reliability Metrics

Part Number	Process	EFR Reject	EFR Sample Size	PPM	LTA Rejects	LTA Device Hours	FITS	MTTF (Hours)
LPC662AIM	P2CMOS	0	48295	0	1	4172500	2	536440139
LPC662AIMX	P2CMOS	0	48295	0	1	4172500	2	536440139
LPC662I MDC	P2CMOS	0	48295	0	1	4172500	2	536440139
LPC662I MWC	P2CMOS	0	48295	0	1	4172500	2	536440139
LPC662IM	P2CMOS	0	48295	0	1	4172500	2	536440139
LPC662IMX	P2CMOS	0	48295	0	1	4172500	2	536440139

Note: The Early Failure Rates (EFR) were calculated as point estimate PPM based on rejects and sample size for EFR. The Long Term Failure Rates were calculated at 60% confidence using the Arrhenius equation at 0.7eV activation energy and derating the assumed stress temperature of 150°C to an application temperature of 55°C.

For more information on Reliability Metrics, please click here.

Design Tools

Title	Size in Kbytes	Date
Amplifiers Selection Guide software for Windows	8 Kbytes	6-Mar-2007	View

If you have trouble printing or viewing PDF file(s), see Printing Problems.

More Application Notes

Title	Size in Kbytes	Date
AN-856: Application Note 856 A SPICE Compatible Macromodel for CMOS Operational Amplifiers	121 Kbytes	1-Oct-02	Download

If you have trouble printing or viewing PDF file(s), see Printing Problems.

LPC662

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