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LN66L

Features: ·High-power output, high-efficiency :PO = 8 mW (typ.)·Emitted light spectrum suited for silicon photodetectors·Good radiant power output linearity with respect to input current·Wide directivity : q = 25 deg. (typ.)·Transparent epoxy resin package·Long lead-wire typeSpecifications ...

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LN66L: Features: ·High-power output, high-efficiency :PO = 8 mW (typ.)·Emitted light spectrum suited for silicon photodetectors·Good radiant power output linearity with respect to input current·Wide direct...

LN66L Data Sheet

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Part Number:
LN66L
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·High-power output, high-efficiency :PO = 8 mW (typ.)
·Emitted light spectrum suited for silicon photodetectors
·Good radiant power output linearity with respect to input current
·Wide directivity : q = 25 deg. (typ.)
·Transparent epoxy resin package
·Long lead-wire type




Specifications

Parameter

Symbol

Ratings

Unit

Power dissipation

PD

160

mW

Forward current (DC)

IF

100

mA

Pulse forward current

IFP *

1.5

A

Reverse voltage (DC)

VR

3

V

Operating ambient temperature

Topr

25 to +85

Storage temperature

Tstg

40 to +100

* f = 100 Hz, Duty cycle = 0.1 %


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