Specifications Parameter Symbol Value Units Collector-Base VoltageCollector-Emitter VoltageCollector Current V CBOV CEOI C 5050100 VdcVdcmAdcDescriptionThe LMUN5111DW1T1 (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting o...
LMUN5111DW1T1: Specifications Parameter Symbol Value Units Collector-Base VoltageCollector-Emitter VoltageCollector Current V CBOV CEOI C 5050100 VdcVdcmAdcDescriptionThe LMUN5111DW1T1...
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Parameter |
Symbol |
Value |
Units |
Collector-Base Voltage Collector-Emitter Voltage Collector Current |
V CBO V CEO I C |
50 50 100 |
Vdc Vdc mAdc |
The LMUN5111DW1T1 (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the LMUN5111DW1T1 series, two BRT devices are housed in the SOT363 package which is ideal for lowpower surface mount applications where board space is at a premium.
. Simplifies Circuit Design
. Reduces Board Space
. Reduces Component Count
. Available in 8 mm, 7 inch/3000 Unit Tape and Reel