Features: High slew rate 250 V/msWide bandwidth 35 MHzPeak output current g300 mA Input and output stages pinned out separatelySingle or dual supply operation Thermal protection Error flag warns of faultsWide supply voltage range g5V to g15VApplicationHigh speed ATE pin driver Data acquisitionDri...
LM6313: Features: High slew rate 250 V/msWide bandwidth 35 MHzPeak output current g300 mA Input and output stages pinned out separatelySingle or dual supply operation Thermal protection Error flag warns of...
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Total Supply Voltage (aVS to bVS).......... 36V (g18)
A1 Differential Input Voltage (Note 2) g............7V
A1 Input Voltage ..................(Va b0.7) to (Vb b7V)
A2 Input to Output Voltage ............................g7V
A2 Input Voltage gVS
Flag Output Voltage GND to aVS
Short-Circuit to Ground (Note 3)
Storage Temperature Range b65 oC s T s a150 oCßC
Lead Temperature (Soldering, 5 seconds) 260 oC
ESD Tolerance (Note 4)
Pins 10 and 11 g................................................600V
All Other Pins g................................................1500V
Operating Temperature Range
LM6313N ............................................0oC to 70 oC
Thermal Derating Information (Note 5)
iJA .................................................................40o C/W
TJ (Max).........................................................125 oC
The LM6313 is a high-speed, high-power operational amplifier. This operational amplifier features a 35 MHz small signal bandwidth, and 250 V/ms slew rate. A compensation pin is included for adjusting the open loop bandwidth. The input stage (A1) and output stage (A2) are pinned out separately, and can be used independently. The operational amplifier is designed for low impedance loads and will deliver g300 mA.
The LM6313 has both overcurrent and thermal shutdown protection with an error flag to signal both these fault conditions. These amplifiers are built with National's VIPTM (Vertically Integrated PNP) process which provides fast PNP transistors that are true complements to the already fast NPN devices. This advanced junction-isolated process delivers high speed performance without the need for complex and expensive dielectric isolation.