Features: High slew rate: 800 V/s High output current: ±300 mA Stable with large capacitive loads Current and thermal limiting Electronic shutdown 5V to ±15V operation guaranteed Fully specified to drive 50 linesApplication Line Driving Radar SonarPinoutSpecificationsSupply Voltage ..................
LM6225: Features: High slew rate: 800 V/s High output current: ±300 mA Stable with large capacitive loads Current and thermal limiting Electronic shutdown 5V to ±15V operation guaranteed Fully specified to ...
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Features: Rated for full 0°C to +90°C range with 3.0V supplySuitable for remote applicationsAppli...
Supply Voltage ..........................................................36V (±18V)
Input to Output Voltage (Note 2) .........................................±7V
Input Voltage ...............................................................±Vsupply
Output Short-Circuit to GND
(Note 3) .....................................................................Continuous
Flag Output Voltage ...............................GND Vflag +Vsupply
Storage Temperature Range.......................... −65°C to +150°C
Lead Temperature
(Soldering, 10 seconds) ....................................................260°C
ESD Tolerance (Note 9) ...................................................±1500V
JA (Note 4)
H Package .....................................................................150°C/W
N Package .......................................................................40°C/W
Maximum Junction
Temperature (TJ) ..............................................................150°C
The LM6225 family of high speed unity gain buffers slew at 800 V/s and have a small signal bandwidth of 50 MHz while driving a 50W load. These buffers drive ±300 mA peak and do not oscillate while driving large capacitive loads. The LM6125 contains unique features not found in power buffers; these include current limit, thermal shutdown, electronic shutdown, and an error flag that warns of fault conditions.
These buffers are built with National's VIP™ (Vertically Integrated PNP) process which provides fast PNP transistors that are true complements to the already fast NPN devices. This advanced junction-isolated process delivers high speed performance without the need for complex and expensive dielectric
isolation.