LM5112

·Compound CMOS and bipolar outputs reduce output current variation
· 7A sink/3A source current
· Fast propagation times (25 ns typical)
·Fast rise and fall times (14 ns/12 ns rise/fall with 2 nF load)
·Inverting and non-inverting inputs provide either configuration with a single device
· Supply rail under-voltage lockout protection
· Dedicated input ground (IN_REF) for split supply or single supply operation
· Power Enhanced 6-pin LLP package (3.0mm x 3.0mm)
·Output swings from VCC to VEE which can be negative relative to input ground

The LM5112 MOSFET gate driver provides high peak gate drive current in the tiny LLP-6 package (SOT23 equivalent footprint) with improved package power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The LM5112 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.