LM5109

·Drives both a high side and low side N-Channel MOSFET
·1A peak output current (1.0A sink / 1.0A source)
·Independent TTL compatible inputs
·Bootstrap supply voltage to 118V DC
·Fast propagation times (27 ns typical)
· Drives 1000 pF load with 15ns rise and fall times
·Excellent propagation delay matching (2 ns typical)
·Supply rail under-voltage lockout
·Low power consumption
·Pin compatible with ISL6700

·Current Fed push-pull converters
·Half and Full Bridge power converters
·Solid state motor drives
·Two switch forward power converters

V_DD to V_SS .........................................................................-0.3V to 18V
HB to HS ............................................................................−0.3V to 18V
LI or HI to V_SS .........................................................−0.3V to V_DD +0.3V
LO to V_SS .................................................................−0.3V to V_DD +0.3V
HO to V_SS ..........................................................V_HS −0.3V to V_HB +0.3V
HS to V_SS (Note 6) ..............................................................−5V to 100V
HB to V_SS ........................................................................................118V
Junction Temperature ................................................-40°C to +150°C
Storage Temperature Range ....................................−55°C to +150°C
ESD Rating HBM (Note 2) .................................................................2 kV

The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration.

The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled with TTL compatible input thresholds. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Undervoltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages.