LM5107

VDD to VSS ......................................-0.3V to 18V
HB to HS .........................................−0.3V to 18V
LI or HI to VSS .....................−0.3V to VDD +0.3V
LO to VSS ............................−0.3V to VDD +0.3V
HO to VSS VHS .....................−0.3V to VHB +0.3V
HS to VSS (Note 6) ..........................−5V to 100V
HB to VSS ....................................................118V
Junction Temperature ............-40°C to +150°C
Storage Temperature Range −55°C to +150°C
ESD Rating HBM (Note 2).............................. 2 kV


Description

The LM5107 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100V. The outputs are independently controlled with TTL compatible input thresholds. An integrated on chip high voltage diode is provided to charge the high side gate drive bootstrap capacitor. A robust level shifter technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. The device is available in the SOIC-8 and the thermally enhanced LLP-8 packages.