Features: ·Drives both a high side and low side N-channel MOSFET·1.8A peak gate drive current·Bootstrap supply voltage range up to 118V DC·Integrated bootstrap diode·Single TTL compatible Input·Programmable turn-on delays (Dead-time)· Enable Input pin·Fast turn-off propagation delays (26ns typical...
LM5105: Features: ·Drives both a high side and low side N-channel MOSFET·1.8A peak gate drive current·Bootstrap supply voltage range up to 118V DC·Integrated bootstrap diode·Single TTL compatible Input·Prog...
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·Drives both a high side and low side N-channel MOSFET
·1.8A peak gate drive current
·Bootstrap supply voltage range up to 118V DC
·Integrated bootstrap diode
·Single TTL compatible Input
·Programmable turn-on delays (Dead-time)
· Enable Input pin
·Fast turn-off propagation delays (26ns typical)
· Drives 1000pF with 15ns rise and fall time
· Supply rail under-voltage lockout
· Low power consumption
· Solid State motor drives
·Half and Full Bridge power converters
· Two switch forward power converters
The LM5105 is a high voltage gate driver designed to drive both the high side and low side N Channel MOSFETs in a synchronous buck or half bridge configuration.
The floating high-side driver is capable of working with rail voltages up to 100V.
The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead-time through tightly matched turn-on delay circuits. A high voltage diode is provided to charge the high side gate drive bootstrap capacitor.
The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Under-voltage lockout disables the gate driver when either the low side or the bootstrapped high side supply voltage is below the operating threshold. The LM5105 is offered in the thermally enhanced 10-pin LLP plastic package.