LM5104

·Drives both a high side and low side N-channel MOSFET
·Adaptive rising and falling edges with programmable additional delay
·Single input control
·Bootstrap supply voltage range up to 118V DC
·Fast turn-off propagation delay (25 ns typical)
·Drives 1000 pF loads with 15 ns rise and fall times
·Supply rail under-voltage lockout

·Current Fed Push-Pull Power Converters
·High Voltage Buck Regulators
·Active Clamp Forward Power Converters
· Half and Full Bridge Converters

VDD to VSS ................................................................................0.3V to +18V
VHB to VHS ................................................................................0.3V to +18V
IN to VSS ..........................................................................0.3V to VDD + 0.3V
LO Output .........................................................................0.3V to VDD + 0.3V
HO Output VHS ................................................................. 0.3V to VHB + 0.3V
VHS to VSS ....................................................................................−1V to +100V
VHB to VSS ..................................................................................................118V
RT to VSS ..........................................................................................0.3V to 5V
Junction Temperature .............................................................................+150°C
Storage Temperature Range .................................................55°C to +150°C
ESD Rating HBM .............................................................................................2 kV
(Note 2)

The LM5104 High Voltage Gate Driver is designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck configuration. The floating high-side driver is capable of working with supply voltages up to 100V.

The high side and low side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high voltage diode is provided to charge high side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high side gate driver. Under-voltage lockout is provided on both the low side and the high side power rails. This device is available in the standard SOIC-8 pin and the LLP-10 pin packages.