Features: `High voltage matched pairs of transistors, VBE matched ±5 mV, input offset current 2 A max at IC e 1 mA`Five general purpose monolithic transistors`Operation from dc to 120 MHz`Wide operating current range`Low noise figure 3.2 dB typ at 1 kHzSpecifications LM3146 UnitsPower Dissipation:...
LM3146: Features: `High voltage matched pairs of transistors, VBE matched ±5 mV, input offset current 2 A max at IC e 1 mA`Five general purpose monolithic transistors`Operation from dc to 120 MHz`Wide opera...
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`High voltage matched pairs of transistors, VBE matched ±5 mV, input offset current 2 A max at IC e 1 mA
`Five general purpose monolithic transistors
`Operation from dc to 120 MHz
`Wide operating current range
`Low noise figure 3.2 dB typ at 1 kHz
The LM3146 consists of five high voltage general purpose silicon NPN transistors on a common monolithic substrate.
Two of the transistors are internally connected to form a differentially-connected pair.
The transistors are well suited to a wide variety of applications in low power system in the dc through VHF range. They may be used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching.
The LM3146 is supplied in a 14-lead molded dual-in-line package for applications requiring only a limited temperature range.