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LM3086

Features: ·Two matched pairs of transistorsVBE matched g5 mVInput offset current 2 mA max at IC e 1 mA· Five general purpose monolithic transistors·Operation from DC to 120 MHz· Wide operating current range· Low noise figure 3.2 dB typ at 1 kHz· Full militarytemperature range (LM3045) -55ßC ...

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LM3086: Features: ·Two matched pairs of transistorsVBE matched g5 mVInput offset current 2 mA max at IC e 1 mA· Five general purpose monolithic transistors·Operation from DC to 120 MHz· Wide operating curre...

LM3086 Data Sheet

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Part Number:
LM3086
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·Two matched pairs of transistors
VBE matched g5 mV
Input offset current 2 mA max at IC e 1 mA
· Five general purpose monolithic transistors
·Operation from DC to 120 MHz
· Wide operating current range
· Low noise figure                                                                3.2 dB typ at 1 kHz
· Full military
temperature range (LM3045)                                                -55ßC to +125ßC


Specifications

                                                                                         LM3045                              LM3046/LM3086
                                                                                              Each       Total         Each        Total Units
                                                                                      Transistor     Package     Transistor    Package
Power Dissipation:
TA e 25 ................................................................................300 ............750 ..............300 ..........750 ..............mW
TA e 25 to 55 ............................................................................................................300 ..........750 ..............mW
TA l 55 .........................................................................................................Derate at 6.67 ..........................mW/
TA e 25 to 75 ....................................................................300 .............750 ...................................................mW
TA l 75 Derate at ......................................................................8 ...................................................................mW/
Collector to Emitter Voltage, VCEO ............................................15 ..............15 .......................................................V
Collector to Base Voltage, VCBO ................................................20 ..............20 .......................................................V
Collector to Substrate Voltage, VCIO (Note 1) ...........................20 ..............20 .......................................................V
Emitter to Base Voltage, VEBO .....................................................5 ................5 .......................................................V
Collector Current, IC ...................................................................50 ..............50 ....................................................mA
Operating Temperature Range ...............................-55 to +125 .....................................................-40 to +85
Storage Temperature Range ..................................-65 to +150 .....................................................-65 to +85
Soldering Information
Dual-In-Line Package Soldering (10 Sec.) ...............................260 ..........260
Small Outline Package
Vapor Phase (60 Seconds) ..........................................................................215
Infrared (15 Seconds) .................................................................................220
See AN-450 ``Surface Mounting Methods and Their Effect on Product Reliability'' for other methods of soldering surface mount
devices.


Description

The LM3045, LM3046 and LM3086 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially-connected pair.

Thetransistors are well suited to a wide variety of applications in low power system in the DC through VHF range.

They may be used as discrete transistors in conventional circuits however, in addition, they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching.

The LM3045 is supplied in a 14-lead cavity dualin- line package rated for operation over the full military temperature range.

The LM3046 and LM3086 are electrically identical to the LM3045 but are supplied in a 14-lead molded dual-in-line package for applications requiring only a limited temperature range.




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