LM194

Features: · Emitter-base voltage matched to 50 mV· Offset voltage drift less than 0.1 mV/§C· Current gain (hFE) matched to 2%· Common-mode rejection ratio greater than 120 dB· Parameters guaranteed over 1 mA to 1 mA collector current· Extremel· low noise· Superior logging characteristics compared ...

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SeekIC No. : 004394726 Detail

LM194: Features: · Emitter-base voltage matched to 50 mV· Offset voltage drift less than 0.1 mV/§C· Current gain (hFE) matched to 2%· Common-mode rejection ratio greater than 120 dB· Parameters guaranteed ...

floor Price/Ceiling Price

Part Number:
LM194
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

· Emitter-base voltage matched to 50 mV
· Offset voltage drift less than 0.1 mV/§C
· Current gain (hFE) matched to 2%
· Common-mode rejection ratio greater than 120 dB
· Parameters guaranteed over 1 mA to 1 mA collector current
· Extremel· low noise
· Superior logging characteristics compared to conventional pairs
· Plug-in replacement for presentl· available devices





Specifications

Collector Current .............. 20 mA
Collector-Emitter Voltage ..........VMAX
Collector-Emitter Voltage .......... 35V
LM394C .................... 20V
Collector-Base Voltage............ 35V
LM394C.................... 20V
Collector-Substrate Voltage ........ 35V
LM394C .................... 20V
Collector-Collector Voltage ......... 35V
LM394C .................. 20V
Base-Emitter Current .........±10 mA
Power Dissipation............500 mW
Junction Temperature
LM194 .............. -55 to +125
LM394/LM394B/LM394C .... -25 to a85
Storage Temperature Range .-65 to +150
Soldering Information
Metal Can Package (10 sec.) ...... 260
Dual-In-Line Package (10 sec.) ..... 260
Small Outline Package
Vapor Phase (60 sec.) ........... 215
Infrared (15 sec.) .............. 220





Description

The LM194 and LM394 are junction isolated ultra wellmatched monolithic NPN transistor pairs with an order of magnitude improvement in matching over conventional transistor pairs. This was accomplished by advanced linear processing and a unique new device structure.

Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic emitter and base resistances are much lower than presently available pairs, either monolithic or discrete, giving extremely low noise and theoretical operation over a wide current range.

Most parameters are guaranteed over a current range of 1 mA to 1 mA and 0V up to 40V collector-base voltage, ensuring superior performance in nearly all applications. To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitterbase junction of each transistor. These prevent degradation due to reverse biased emitter currentÐthe most common cause of field failures in matched devices. The parasitic isolation junction formed by the diodes also clamps the substrate region to the most negative emitter to ensure complete isolation between devices.

The LM194 and LM394 will provide a considerable improvement in performance in most applications requiring a closely
matched transistor pair. In many cases, trimming can be eliminated entirely, improving reliability and decreasing costs. Additionally, the low noise and high gain make this device attractive even where matching is not critical.

The LM194 and LM394/LM394B/LM394C are available in an isolated header 6-lead TO-5 metal can package. The LM394/LM394B/LM394C are available in an 8-pin plastic dual-in-line package. The LM194 is identical to the LM394 except for tighter electrical specifications and wider temperature range.






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