LLE16350X Selling Leads, Price trend, LLE16350X DataSheet download, circuit diagram from SeekIC.com

Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization realizes very good stability of the characteristics and excellent lifetime· Multicell geometry gives goo...

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SeekIC No. : 004394440 Detail

LLE16350X: Features: · Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Interdigitated structure provides high emitter efficiency· Gold metallization real...

LLE16350X Data Sheet

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Part Number:: LLE16350X
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Month Sales

268 Transactions

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Upload time: 2024/12/21

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Recent History
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Product Details

Description

Features:

· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Interdigitated structure provides high emitter efficiency
· Gold metallization realizes very good stability of the characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

Application

Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.5 GHz and 1.8 GHz.

Description

LLE16350X NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package, with emitter connected to flange.

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LLE16350X

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