Features: · Diffused emitter ballasting resistors roviding excellent current sharing nd withstanding a high VSWR· Interdigitated structure provides igh emitter efficiency· Gold metallization realizes very ood stability of the characteristics nd excellent lifetime· Multicell geometry gives good ala...
LLE15370X: Features: · Diffused emitter ballasting resistors roviding excellent current sharing nd withstanding a high VSWR· Interdigitated structure provides igh emitter efficiency· Gold metallization realize...
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· Diffused emitter ballasting resistors roviding excellent current sharing nd withstanding a high VSWR
· Interdigitated structure provides igh emitter efficiency
· Gold metallization realizes very ood stability of the characteristics nd excellent lifetime
· Multicell geometry gives good alance of dissipated power and ow thermal resistance
· Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.
Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.4 GHz and 1.6 GHz.
LLE15370X NPN silicon planar epitaxial icrowave power transistor in a OT437A glued cap metal ceramic lange package, with emitter onnected to flange.