LLDB4

The LLDB4 is a kind of silicon bidirectional trigger diodes. These kind of diacs are intended for use in thyristor phase control, circuits for lamp-dimming, universal-motor speed controls, and heat controls.

The absolute maximum ratings of LLDB4 are (1)power dissipation (T a = 65°C) P tot: 150 mW; (2)repetitive peak on-state current (tp = 20 s, f = 100 Hz) ITRM: 2 A; (3)operating junction and storage temperature range T j , Tstg: - 40 to + 125°C.

The characteristics at T a = 25°C of LLDB4 can be summarized as (1)breakover voltage symmetry at C = 22 nF, see diagram 1 [|+V BO |-|-V BO |]: 3 V; (2)dynamic breakover voltage at I = [I BO to I F = 10 mA] | V ± |: 5V; (3)output voltage see diagram 2 VO: 5V; (4)breakover current at C = 22 nF IBO: 50 A; (5)leakage current at V B = 0.5 VBO max I B: 10 A; (6)rise time see diagram 3 t r: 2 s.