Features: • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.• The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swi...
LL6263: Features: • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.• The low forward voltage drop and fast switc...
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• For general purpose applications
• Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.
• The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications.
• This diode is also available in the DO-35 case with type designation 1N5711 and 1N6263.
Parameter |
Symbol |
Value |
Unit |
Peak Inverse Voltage LL5711 LL6263 |
VRRM |
70 60 |
V |
Power Dissipation (Infinite Heatsink) |
Ptot |
400(1) |
mW |
Maximum Single Cycle Surge 10s Square Wave |
IFSM |
2.0 |
A |
Junction Temperature |
Tj |
125 |
|
Storage Temperature Range |
TS |
55 to +150 |