Recovery Time
:
Maximum Power Dissipation
:
Configuration
: Single
Mounting Style
: SMD/SMT
Product
: Schottky Diodes
Operating Temperature Range
: - 55 C to + 125 C
Peak Reverse Voltage
: 20 V
Forward Continuous Current
: 1 A
Max Surge Current
: 25 A
Packaging
: Bulk
Maximum Reverse Leakage Current
: 1000 uA
Package / Case
: MELF
Forward Voltage Drop
: 0.75 V at 3 A
Features: · Surge overload ratings to 25 amperes peak
· Ideal for printed circuit board
· Reliable low cost construction utilizing molded plastic technique results in inexpensive product
· Mounting position: Any
· Weight: 0.12 gram
SpecificationsRating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
| Type Number |
Symbol |
LL5817 |
LL5818 |
LL5819 |
Units |
| Maximum Recurrent Peak Reverse Voltage |
VRRM |
20 |
30 |
40 |
V |
| Maximum RMS Voltage |
VRMS |
14 |
21 |
28 |
V |
| Maximum DC Blocking Voltage |
VDC |
20 |
30 |
40 |
V |
Maximum Average Forward Rectified Current
@TL = 90 |
I(AV) |
1.0 |
A |
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method ) |
IFSM |
25 |
V |
| Maximum Instantaneous Forward Voltage @1.0A |
VF |
0.450 |
0.550 |
0.600 |
V |
| Maximum Instantaneous Forward Voltage @3.0A |
VF |
0.750 |
0.875 |
0.900 |
V |
Maximum DC Reverse Current @ TA=25
at Rated DC Blocking Voltage @ TA=100 |
IR |
1.0
10 |
mA
mA |
| Typical Thermal Resistance (Note 1) |
RJA |
80 |
/W |
| Typical Junction Capacitance ( Note 2 ) |
Cj |
110 |
pF |
| Operating and Storage Temperature Range |
TJ,TSTG |
- 65 to + 125 / - 65 to + 150 |
|
Notes: 1. Thermal Resistance Junction to Ambient
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
LL5817 Data Sheet
