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LL5711

Features: • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.• The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast swi...

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SeekIC No. : 004394429 Detail

LL5711: Features: • For general purpose applications • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.• The low forward voltage drop and fast switc...

LL5711 Data Sheet

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Part Number:
LL5711
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• For general purpose applications
• Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.
• The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications.
• This diode is also available in the DO-35 case with type designation 1N5711 and 1N6263.






Specifications

Parameter
Symbol
Value
Unit
Peak Inverse Voltage
LL5711
LL6263
VRRM
70
60
V
Power Dissipation (Infinite Heatsink)
Ptot
400(1)
mW
Maximum Single Cycle Surge 10s Square Wave
IFSM
2.0
A
Junction Temperature
Tj
125
Storage Temperature Range
TS
55 to +150





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