Features: ·For general purpose applications. The LL103A, B, C is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.·The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast sw...
LL103C: Features: ·For general purpose applications. The LL103A, B, C is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.·The low forward voltage drop and fast swit...
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·For general purpose applications. The LL103A, B, C is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring.
·The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems.
·This diode is also available in DO-35 case with the type designation SD103A, B, C, and in the SOD-123 case with type designation SD103AW, SD103BW, SD103CW.
Symbol | Value | Unit | |
Peak Inverse Voltage LL103A LL103B LL103C |
VRRM VRRM VRRM |
40 30 20 |
V |
Power Dissipation (Infinite Heatsink) TC = 3/8² from Body derates at 4 mW/ to 0 at 125 |
Ptot | 4001) | mW |
Junction Temperature | Tj | 125 | |
Storage Temperature Range | TS | 55 to +150 | |
Single Cycle Surge 60-Hz Sine Wave |
IFSM | 15 | A |
1) Valid provided that electrodes are kept at ambient temperature. |