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LK822

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 140 Watts 1.10/W 200 -65 to 150 14.05A 36V 36V 20VDescriptionSilicon VDMOS and...

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SeekIC No. : 004394375 Detail

LK822: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSou...

LK822 Data Sheet

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Part Number:
LK822
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Total
Device
Dissipation		 Junction to
Case Thermal
Resistance		 Maximum
Junction
Temperature		 Storage
Temperature		 DC Drain
Current		 Drain to
Gate
Voltage		 Drain to
Source
Voltage		 Gate to
Source
Voltage
140 Watts 1.10/W 200 -65 to 150 14.05A 36V 36V 20V





Description

Silicon VDMOS and LDMOS transistors LK822 designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet" process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.






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