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LH52D1000

Features: ` Access time: 85 ns (MAX.), 100 ns (MAX.)` Current consumption: Operating: 40 mA (MAX.) 6 mA (MAX.) (tRC, tWC = 1 ms) Standby: 45 mA (MAX.)` Data Retention: 1.0 A (MAX. VCCDR = 3 V, tA = 25)` Single power supply: 2.7 V to 3.6 V` Operating temperature: -40 to +85` Fully-static operation`...

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SeekIC No. : 004394191 Detail

LH52D1000: Features: ` Access time: 85 ns (MAX.), 100 ns (MAX.)` Current consumption: Operating: 40 mA (MAX.) 6 mA (MAX.) (tRC, tWC = 1 ms) Standby: 45 mA (MAX.)` Data Retention: 1.0 A (MAX. VCCDR = 3 V, tA = ...

LH52D1000 Data Sheet

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Part Number:
LH52D1000
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Access time: 85 ns (MAX.),
    100 ns (MAX.)
` Current consumption:
    Operating: 40 mA (MAX.)
    6 mA (MAX.) (tRC, tWC = 1 ms)
    Standby: 45 mA (MAX.)
` Data Retention:
    1.0 A (MAX. VCCDR = 3 V, tA = 25)
` Single power supply: 2.7 V to 3.6 V
` Operating temperature: -40 to +85
` Fully-static operation
` Three-state output
` Not designed or rated as radiation hardened
` Packages:
    32-pin 8*20 mm2 TSOP
    32-pin 8*13.4 mm2 STSOP
` N-type bulk silicon


Pinout

Connection Diagram


Specifications

PARAMETER
SYMBOL
RATING
 UNIT
NOTE
Supply voltage
Vcc
0.5 to +4.6
 V 1
Input voltage
VIN
0.5 to VCC + 0.3
 V
1,2
Operating temperature
Topr

40 to +85
-
Storage temperature
Tstg
55 to +150
-

NOTE:
1. The maximum applicable voltage on any pin with respect to GND.
2. Undershoot of -3.0 V is allowed width of pulse below 50 ns.



Description

The LH52D1000 is a static RAM organized as 131,072× 8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology.




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