Features: ` 32,768 *8 bit organization` Access time: 70 ns (MAX.)` Supply current: Operating: 45 mA (MAX.) 10 mA (MAX.) (tRC, tWC = 1 ms) Standby: 40 mA (MAX.)` Data retention current: 1.0 mA (MAX.) (VCCDR = 3 V, TA = 25)` Wide operating voltage range: 4.5 V ± 5.5 V` Operating temperature: Commeri...
LH52256CH: Features: ` 32,768 *8 bit organization` Access time: 70 ns (MAX.)` Supply current: Operating: 45 mA (MAX.) 10 mA (MAX.) (tRC, tWC = 1 ms) Standby: 40 mA (MAX.)` Data retention current: 1.0 mA (MAX.)...
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` 32,768 *8 bit organization
` Access time: 70 ns (MAX.)
` Supply current:
Operating: 45 mA (MAX.)
10 mA (MAX.) (tRC, tWC = 1 ms)
Standby: 40 mA (MAX.)
` Data retention current: 1.0 mA (MAX.)
(VCCDR = 3 V, TA = 25)
` Wide operating voltage range:
4.5 V ± 5.5 V
` Operating temperature:
Commerical temperature 0to +70
Industrial temperature -40° to +85
` Fully-static operation
` Three-state outputs
` Not designed or rated as radiation hardened
` Package:
28-pin, 600-mil DIP
28-pin, 450-mil SOP
28-pin, 300-mil SK-DIP
28-pin, 8*3 mm2 TSOP (Type I)
` N-type bulk silicon
PARAMETER | SYMBOL | RATING | UNIT | NOTE |
Supply voltage | VCC | -0.5 to +7.0 | V | 1 |
Input voltage |
VIN |
0.5 to VCC + 0.5 | V | 1,2 |
Operating temperature |
TOPR |
0 to +70 |
- | |
Storage temperature | Tstg |
65 to +150 |
- |
The LH52256CH is a Static RAM organized as 32,768×8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology.