LF356

Features: `Replace expensive hybrid and module FET op amps`Rugged JFETs allow blow-out free handling compared with MOSFET input devices`Excellent for low noise applications using either high or ow source impedance-very low 1/f corner`Offset adjust does not degrade drift or common-mode ejection as ...

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LF356: Features: `Replace expensive hybrid and module FET op amps`Rugged JFETs allow blow-out free handling compared with MOSFET input devices`Excellent for low noise applications using either high or ow s...

floor Price/Ceiling Price

Part Number:
LF356
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

`Replace expensive hybrid and module FET op amps
`Rugged JFETs allow blow-out free handling compared with MOSFET input devices
`Excellent for low noise applications using either high or ow source impedance-very low 1/f corner
`Offset adjust does not degrade drift or common-mode ejection as in most monolithic amplifiers
`New output stage allows use of large capacitive loads 5,000 pF) without stability problems
`nternal compensation and large differential input voltage capability





Application

·Precision high speed integrators
·Fast D/A and A/D converters
·High impedance buffers
·Wideband, low noise, low drift amplifiers





Specifications

If Military/Aerospace specified devices are required, contact the National Semiconductor Sales Office/Distributors for
availability and specifications.
LF155/6 LF256/7/LF356B LF355/6/7
Supply Voltage ±22V ±22V±18V
Differential Input Voltage±40V ±40V ±30V
Input Voltage Range (Note 2)±20V ±20V ±16V
Output Short Circuit Duration Continuous Continuous Continuous
TJMAX
H-Package 150˚C 115˚C 115˚C
N-Package100˚C 100˚C
M-Package 100˚C 100˚C
Power Dissipation at TA = 25˚C (Notes
1, 8)
H-Package (Still Air) 560 mW400 mW400 mW
H-Package (400 LF/Min Air Flow) 1200 mW 1000 mW 1000 mW
N-Package670 mW 670 mW
M-Package380 mW 380 mW
Thermal Resistance (Typical) JA
H-Package (Still Air)160˚C/W160˚C/W 160˚C/W
H-Package (400 LF/Min Air Flow)65˚C/W 65˚C/W65˚C/W
N-Package 130˚C/W 130˚C/W
M-Package 195˚C/W 195˚C/W
(Typical) JC
H-Package 23˚C/W 23˚C/W 23˚C/W
Storage Temperature Range −65˚C to +150˚C−65˚C to +150˚C−65˚C to +150˚C
Soldering Information (Lead Temp.)
Metal Can Package
Soldering (10 sec.)300˚C 300˚C 300˚C
Dual-In-Line Package
Soldering (10 sec.)260˚C 260˚C 260˚C
Small Outline Package
Vapor Phase (60 sec.) 215˚C 215˚C
Infrared (15 sec.) 220˚C 220˚C
See AN-450 "Surface Mounting Methods and Their Effect on Product Reliability" for other methods of
soldering surface mount devices.
ESD tolerance
(100 pF discharged through 1.5kΩ) 1000V1000V1000V






Description

These are the first monolithic JFET LF356 input operational ampli- fiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Tech- nology). These LF356 feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The LF356 are also designed for high slew rate, wide bandwidth, extremely fast settling time,low voltage and current noise and a low 1/f noise corner.






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