Features: `N-Channel Enhancement Mode Device `DMOS Structure `Lower Capacitances for Broadband Operation `Common Source Configuration `Lower Noise Floor `Applications Broadband Linear Operation500'tiHz to 1200 MHz Specifications Symbol Parameter Ratings Unit VDS Drain-Source Volta...
LF281OA: Features: `N-Channel Enhancement Mode Device `DMOS Structure `Lower Capacitances for Broadband Operation `Common Source Configuration `Lower Noise Floor `Applications Broadband Linear Operation500'...
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Symbol | Parameter | Ratings | Unit |
VDS | Drain-Source Voltage | 65 | V |
VGS | Gate-Source Voltage | 20 | V |
IDS | Drain-Source Current | 2.8 | A |
PC | Power Dissipation | 26.5 | W |
TSTG | Storage Temperature | -65 to +150 | |
JC | Thermal Resitance | 6.6 | \W |
TJ | Junction Temperature | 200 |