LET9045S

Configuration :
Transistor Polarity :
Frequency :
Gain :
Output Power :
Drain-Source Breakdown Voltage :
Continuous Drain Current :
Gate-Source Breakdown Voltage :
Maximum Operating Temperature :
Package / Case :
Packaging : Tube


Features:

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• POUT = 45 W with 17 dB gain MIN @ 945 MHz /28V
• NEW RF PLASTIC PACKAGE
• HIGH GAIN
• ESD PROTECTION
• AVAILABLE IN TAPE & REEL with TR SUFFIX


Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain-Source Voltage	65	V
VGS	Gate-Source Voltage	-0.5 to +15	V
ID	Drain Current	5	A
PDISS	Power Dissipation (@ Tc = 70 °C)	160	W
Tj	Max. Operating Junction Temperature	165
TSTG	Storage Temperature	-65 to +150

Description

The LET9045S is  a common source N-Channel,enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies up to 1 GHz. LET9045S boasts the excellent gain,linearity  and reliability  of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. LET9045S's superior linearity performance makes it an ideal solution for base station applications.

The PowerSO-10  plastic  package, designed to offer  high  reliability,  is  the   first  ST  JEDEC approved, high power SMD package. It has been specially optimized for RF needs and  offers excellent RF performances and ease of assembly.