Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL• POUT = 220 W with 17 dB TYP. gain @ 860 MHz• BeO FREE PACKAGE• INTERNAL INPUT MATCHING• ESD PROTECTIONSpecifications Symbol Parameter Value Unit V(BR)DSS Drain-Source V...
LET8180: Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL• POUT = 220 W with 17 dB TYP. gain @ 860 MHz• BeO FREE PACKAGE• INTERNAL INPUT MATCHING...
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Symbol | Parameter | Value | Unit |
V(BR)DSS | Drain-Source Voltage | 65 | V |
VGS | Gate-Source Voltage | -0.5 to +15 | V |
ID | Drain Current | 18 | A |
PDISS | Power Dissipation (@ Tc = 70 °C) | 289 | W |
Tj | Max. Operating Junction Temperature | 200 | |
TSTG | Storage Temperature | -65 to +200 |
The LET8180 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET8180 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for base station applications requiring high linearity.