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LET8180

Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL• POUT = 220 W with 17 dB TYP. gain @ 860 MHz• BeO FREE PACKAGE• INTERNAL INPUT MATCHING• ESD PROTECTIONSpecifications Symbol Parameter Value Unit V(BR)DSS Drain-Source V...

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SeekIC No. : 004393593 Detail

LET8180: Features: • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL• POUT = 220 W with 17 dB TYP. gain @ 860 MHz• BeO FREE PACKAGE• INTERNAL INPUT MATCHING...

LET8180 Data Sheet

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Part Number:
LET8180
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/6/9

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Product Details

Description



Features:

• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION, PUSH-PULL
• POUT = 220 W with 17 dB TYP. gain @ 860 MHz
• BeO FREE PACKAGE
• INTERNAL INPUT MATCHING
• ESD PROTECTION


Specifications

Symbol Parameter Value Unit
V(BR)DSS Drain-Source Voltage 65 V
VGS Gate-Source Voltage -0.5 to +15 V
ID Drain Current 18 A
PDISS Power Dissipation (@ Tc = 70 °C) 289 W
Tj Max. Operating Junction Temperature 200
TSTG Storage Temperature -65 to +200



Description

The LET8180 is a  common  source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET8180 is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for base station applications requiring high linearity.




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