LET19060C Selling Leads, Price trend, LET19060C DataSheet download, circuit diagram from SeekIC.com

Features: • IS-97 CDMA PERFORMANCES POUT = 7.5 W EFF. = 18 %• EDGE PERFORMANCES POUT = 30 W EFF. = 25 %• GSM PERFORMANCES POUT = 65 W EFF. = 45 %• EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE• INTERNAL INPUT/OUTPUT MATCHING• ESD PROTECTIONSpecifications ...

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SeekIC No. : 004393586 Detail

LET19060C: Features: • IS-97 CDMA PERFORMANCES POUT = 7.5 W EFF. = 18 %• EDGE PERFORMANCES POUT = 30 W EFF. = 25 %• GSM PERFORMANCES POUT = 65 W EFF. = 45 %• EXCELLENT THERMAL STABILITY...

LET19060C Data Sheet

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Part Number:: LET19060C
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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Recent History
What is this?

LET16045C evaluate
US $85.8 - 85.8 / Piece

Transistors RF MOSFET Power RF PWR Trans LdMOST N-Ch 45W 16dB 1600
LET16060C evaluate
US $96.72 - 96.72 / Piece

Transistors RF MOSFET Power RF PWR Trans LdMOST N-Ch 60W 13.8dB 1600

Product Details

Description

Features:

• IS-97 CDMA PERFORMANCES
POUT = 7.5 W
EFF. = 18 %
• EDGE PERFORMANCES
POUT = 30 W
EFF. = 25 %
• GSM PERFORMANCES
POUT = 65 W
EFF. = 45 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT/OUTPUT MATCHING
• ESD PROTECTION

Specifications

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain-Source Voltage	65	V
V_GS	Gate-Source Voltage	-0.5 to +15	V
I_D	Drain Current	7	A
P_DISS	Power Dissipation (@ Tc = 70 °C)	130	W
T_j	Max. Operating Junction Temperature	200
T_STG	Storage Temperature	-65 to +150

Description

The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.

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LET19060C

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