LET19060C Selling Leads, Price trend, LET19060C DataSheet download, circuit diagram from SeekIC.com

Features: • IS-97 CDMA PERFORMANCES POUT = 7.5 W EFF. = 18 %• EDGE PERFORMANCES POUT = 30 W EFF. = 25 %• GSM PERFORMANCES POUT = 65 W EFF. = 45 %• EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE• INTERNAL INPUT/OUTPUT MATCHING• ESD PROTECTIONSpecifications ...

See larger image

SeekIC No. : 004393586 Detail

LET19060C: Features: • IS-97 CDMA PERFORMANCES POUT = 7.5 W EFF. = 18 %• EDGE PERFORMANCES POUT = 30 W EFF. = 25 %• GSM PERFORMANCES POUT = 65 W EFF. = 45 %• EXCELLENT THERMAL STABILITY...

LET19060C Data Sheet

Get Latest Price

Part Number:: LET19060C
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/5/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

LET16060C evaluate
US $96.72 - 96.72 / Piece

Transistors RF MOSFET Power RF PWR Trans LdMOST N-Ch 60W 13.8dB 1600
LET16045C evaluate
US $85.8 - 85.8 / Piece

Transistors RF MOSFET Power RF PWR Trans LdMOST N-Ch 45W 16dB 1600

Product Details

Description

Features:

• IS-97 CDMA PERFORMANCES
POUT = 7.5 W
EFF. = 18 %
• EDGE PERFORMANCES
POUT = 30 W
EFF. = 25 %
• GSM PERFORMANCES
POUT = 65 W
EFF. = 45 %
• EXCELLENT THERMAL STABILITY
• BeO FREE PACKAGE
• INTERNAL INPUT/OUTPUT MATCHING
• ESD PROTECTION

Specifications

Symbol	Parameter	Value	Unit
V_(BR)DSS	Drain-Source Voltage	65	V
V_GS	Gate-Source Voltage	-0.5 to +15	V
I_D	Drain Current	7	A
P_DISS	Power Dissipation (@ Tc = 70 °C)	130	W
T_j	Max. Operating Junction Temperature	200
T_STG	Storage Temperature	-65 to +150

Description

The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.

Customers Who Bought This Item Also Bought

BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details
ARDUINO IIC/I2C 液晶模块，IGBT
US $$4.50 - 4.80 / Piece

Supply Ability:100Day

View details
DS-4008HCI English version video capture card Hai Kang
US $$120.00 - 120.00 / Piece

Supply Ability:120Week

View details
2DI300A-050 MODULE
US $$30.00 - 30.00 / Piece

Supply Ability:100Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

LET19060C

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Potentiometers, Variable Resistors(1370)

Integrated Circuits (ICs)(111140)

Hardware, Fasteners, Accessories(2239)

Power Supplies - External/Internal (Off-Board)(631)

RF and RFID(1780)

Kits(573)