Position: Home  > All Categories> Integrated Circuits (ICs) > LEE1015T

LEE1015T

Features: • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR• Interdigitated structure provides high emitter efficiency• Gold metallization realizes very good stability of the characteristics and excellent lifetime• Mult...

product image

LEE1015T Picture
See larger image
SeekIC No. : 004393530 Detail

LEE1015T: Features: • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR• Interdigitated structure provides high emitter efficiency• Gold ...

LEE1015T Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
LEE1015T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Interdigitated structure provides high emitter efficiency
• Gold metallization realizes very good stability of the characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated power and low thermal resistance.


Application

Intended for use in common emitter, class A power amplifiers for applications that require a high level of linearity.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 40 V
VCEO collector-emitter voltage open base - 22 V
VCER collector-emitter voltage RBE =10 Ω - 40 V
VEBO emitter-base voltage open collector - 3 V
IC collector current   - 500 mA
Tsld soldering temperature t 10 s; note 1 - 235 W
Ptot total power dissipation Tmb =75 °C - 7.5
Tstg storage temperature   -65 +150
Tj junction temperature   - 200



Description

LEE1015T NPN silicon planar epitaxial microwave power transistor in a SOT122A metal ceramic package.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Line Protection, Backups
BX0023
A20B-1008-0550
Computers, Office - Components, Accessories
DS-4008HCI
LB104V03(A1)
Memory Cards, Modules
WT32
VTL5C7
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Transformers
TM-09210
BV222-1-00992
Circuit Protection
A50QS75-4Y
F-17*77
View more