LE28FV4001CTS-20

The LE28FV4001CTS-20 is a 512K *8 CMOS sector erase, byte program EEPROM. The LE28FV4001C is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology. Breakthroughs in EEPROM cell design and process architecture attain better reliability and manufacturability compared with conventional approaches. The LE28FV4001C erases and programs with a 3.3-volt only power supply. LE28FV4001C conforms to JEDEC standard pinouts for byte wide memories and is compatible with existing industry standard EPROM, flash EPROM and EEPROM pinouts. Featuring high performance programming, the LE28FV4001C typically byte programs in 30s. The LE28FV4001C typically sector (256 bytes) erases in 2ms. Both program and erase times can be optimized using interface feature such as Toggle bit or DATA Polling to indicate the completion of the write cycle. To protect against an inadvertent write, the LE28FV4001C has on chip hardware and software date protection schemes. Designed,manufactured, and tested for a wide spectrum of applications,the LE28FV4001C is offered with a guaranteed sector write endurance of 104 cycles. Data retention is rated greater then 10 years.

The LE28FV4001CTS-20 is best suited for applications that require reprogrammable nonvolatile mass storage of program or data memory. For all system applications, the LE28FV4001C significantly improves performance and reliability, while lowering power consumption when compared with floppy diskettes or EPROM approaches.EEPROM technology makes possible convenient and economical updating of codes and control programs on-line.

The LE28FV4001CTS-20 improves flexibility, while lowering the cost, of program and configuration storage applications. Figure 1 shows the pin assignments for the 32 lead Plastic TSOP packages. Figure 2 shows the functional block diagram of the LE28FV4001C. Pin description and operation modes can be found in Tables 1 through 3.