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LE28F4001M

Features: • Fabricated in a highly reliable 2-layer polysilicon CMOS flash EEPROM process. • Read and write operation from a 5 V single-voltage power supply• Sector erase function: 256 bytes per sector• Fast access time: 150/200 ns• Low power- Operating current (read)...

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SeekIC No. : 004393481 Detail

LE28F4001M: Features: • Fabricated in a highly reliable 2-layer polysilicon CMOS flash EEPROM process. • Read and write operation from a 5 V single-voltage power supply• Sector erase function:...

LE28F4001M Data Sheet

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Part Number:
LE28F4001M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Fabricated in a highly reliable 2-layer polysilicon CMOS flash EEPROM process.
• Read and write operation from a 5 V single-voltage power supply
• Sector erase function: 256 bytes per sector
• Fast access time: 150/200 ns
• Low power
- Operating current (read): 25 mA (maximum)
- Standby current: 20 µA (maximum)
• Highly reliable read and write operations
- Sector write cycles: 104 cycles
- Data retention time: 10 years
• Address and data latches
• Self-timer erase and programming
• Byte programming time: 35 µs (maximum)
• Write complete detection: Toggle bit and data polling
• Hardware and software data protection
• Pin assignment conforms to the JEDEC byte-wide EEPROM standard
• Packages
SOP 32-pin (525 mil) plastic package :LE28F4001M
TSOP 40-pin (10 * 14 mm) plastic package :LE28F4001T
TSOP 40-pin (10 * 14 mm) plastic package :LE28F4001R


Pinout

Connection Diagram


Specifications

Parameter Symbol Ratings Unit Note
Supply voltage VCC 0.5 to +6.0 V 1
Input pin voltage VIN 0.5 to VCC + 0.5 V 1, 2
DQ pin voltage VOUT 0.5 to VCC + 0.5 V 1, 2
A9 pin voltage VA9 0.5 to +14.0 V 1, 3
Allowable power dissipation Pd max 600 mW 1, 4
Operating temperature Topr 0 to +70 1
Storage temperature Tstg 65 to +150 1
Note: 1. Stresses greater than the above listed maximum values may result in damage to the device.
          2. 1.0 to VCC + 1.0 V for pulse widths less than 20 ns.
          3. 1.0 to VCC + 14.0 V for pulse widths less than 20 ns.
          4. Ta = 25 °C


Description

The LE28F4001M Series ICs are 524288-word × 8-bit flash memory products that support on-board reprogramming and feature 5 V single-voltage power supply operation.CMOS peripheral circuits were adopted for high speed,low power, and ease of use. These products support a sector (256 bytes) erase function for fast data rewriting.




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