LE28DW1621T

Applied conditions greater than those listed  under "absolute maximum Stress Ratings" may cause permanent  amage to the device.This is a stress rating only and functional operation of the device at these conditions or  onditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to  solute maximum stress rating conditions may affect device reliability.
Storage Temperature                                                                                    :  -65ºC to +150ºC
D. C. Voltage on Any Pin to Ground Potential                                                :  -0.5V to V_DD + 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential Package Power :   -1.0V to V_DD + 1.0V
Package Power Dissipation Capability (Ta = 25ºC)                                        :  1.0W
[Operating Range]
Ambient Temperature                                                                                     :   0ºC to +70ºC
V_DD                                                                                                                 :   2.7V  to   3.6V
[AC condition of Test]
Input Rise/Fall Time                                                                                         :   5 ns
Output Load(See Figures 13 and 14)                                                              :   C_L = 30 pF

The LE28DW1621T  consists of two memory banks, Bank1 is a 256K x 16 bits or 512K x 8 sector mode flash EEPROM and Bank2 is a 768K x 16 bits or 1536K x 8 sector mode flash EEPROM,  manufactured with SANYO's proprietary, high per-formance FlashTechnology. The LE28DW1621T writes with a 3.0-volt-only power supply.

The LE28DW1621T is divided into two separate memory banks.

Bank1 contains 256 sectors of 1K words or 8 blocks  of 32K words, Bank2  contains 768 sectors of 1K words or 24 blocks  of 32K words.

Any bank may be used for executing code while writing data to a different bank. Each memory bank is controlled by separate Bank selection address (A18,A19) lines.

The LE28DW1621T inherently uses less energy during Erase,and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current,and  time of application. Since for any given voltage range, the Flash technology uses less current to program and has a shorter Erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies.

The Auto Low Power mode automatically reduces the active read current to approximately the same as standby; thus,providing an average read current of approximately 1 mA/MHz of Read cycle time.

The Flash technology  provides fixed Erase and  Program  times,independent of the number of erase/program cycles that have occurred. Therefore the system software or hardware does not have to be modified or derated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated erase/program cycles.