Position: Home  > All Categories> Integrated Circuits (ICs) > LE28CV1001M

LE28CV1001M

Features: • Highly reliable 2-layer polysilicon CMOS flash EEPROM process• Read and write operations using a 5 V single-voltage power supply• Fast access time: 120 and 150 ns• Low power dissipation- Operating current (read): 12 mA (maximum)- Standby current: 15 µA (ma...

product image

LE28CV1001M Picture
See larger image
SeekIC No. : 004393477 Detail

LE28CV1001M: Features: • Highly reliable 2-layer polysilicon CMOS flash EEPROM process• Read and write operations using a 5 V single-voltage power supply• Fast access time: 120 and 150 ns•...

LE28CV1001M Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
LE28CV1001M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Highly reliable 2-layer polysilicon CMOS flash EEPROM process
• Read and write operations using a 5 V single-voltage power supply
• Fast access time: 120 and 150 ns
• Low power dissipation
- Operating current (read): 12 mA (maximum)
- Standby current: 15 µA (maximum)
• Highly reliable read/write
-Erase/write cycles: 104/103cycles
- retention time: 10 years
• Address and data latches
• Fast page rewrite operation
- 128 bytes per page
- Byte/page rewrite time: 5 ms (typical)
- Chip rewrite time: 5 s (typical)
• Automatic rewriting using internally generated Vpp
• Rewrite complete detection function
- Toggle bit
- Data polling
• Hardware and software data protection functions
• All inputs and outputs are TTL compatible.
• Pin assignment conforms to the JEDEC byte-wide EEPROM standard.
• Package
SOP 32-pin (525 mil) plastic package:LE28CV1001M
TSOP 32-pin (8 * 20 mm) plastic package:LE28CV1001T


Pinout

Connection Diagram


Specifications

Parameter Symbol Ratings Unit Note
Supply voltage VCC 0.5 to +6.0 V 1
Input pin voltage VIN 0.5 to VCC + 0.5 V 1, 2
DQ pin voltage VOUT 0.5 to VCC + 0.5 V 1, 2
A9 pin voltage VA9 0.5 to +14.0 V 1, 3
Allowable power dissipation Pd max 600 mW 1, 4
Operating temperature Topr 0 to +70 1
Storage temperature Tstg 65 to +150 1
Notes:1. The device may be destroyed by the application of stresses in excess of the absolute maximum ratings.
           2. 1.0 V to VDD + 1.0 V for pulses less than 20 ns
           3. 1.0 V to +14 V for pulses less than 20 ns


Description

The LE28CV1001M, T Series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 3.3 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power, and ease of use. A 128-byte page rewrite function provides rapid data rewriting.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Power Supplies - Board Mount
HC-06
PM150RSA060-S81AH0G
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Cable Assemblies
CS1W-CN114
XW2Z-500T
Integrated Circuits (ICs)
TA8435H
1MB12-140
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Optoelectronics
SFH7770
TLP423J
View more