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LE28CV1001M

Features: • Highly reliable 2-layer polysilicon CMOS flash EEPROM process• Read and write operations using a 5 V single-voltage power supply• Fast access time: 120 and 150 ns• Low power dissipation- Operating current (read): 12 mA (maximum)- Standby current: 15 µA (ma...

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SeekIC No. : 004393477 Detail

LE28CV1001M: Features: • Highly reliable 2-layer polysilicon CMOS flash EEPROM process• Read and write operations using a 5 V single-voltage power supply• Fast access time: 120 and 150 ns•...

LE28CV1001M Data Sheet

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Part Number:
LE28CV1001M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Highly reliable 2-layer polysilicon CMOS flash EEPROM process
• Read and write operations using a 5 V single-voltage power supply
• Fast access time: 120 and 150 ns
• Low power dissipation
- Operating current (read): 12 mA (maximum)
- Standby current: 15 µA (maximum)
• Highly reliable read/write
-Erase/write cycles: 104/103cycles
- retention time: 10 years
• Address and data latches
• Fast page rewrite operation
- 128 bytes per page
- Byte/page rewrite time: 5 ms (typical)
- Chip rewrite time: 5 s (typical)
• Automatic rewriting using internally generated Vpp
• Rewrite complete detection function
- Toggle bit
- Data polling
• Hardware and software data protection functions
• All inputs and outputs are TTL compatible.
• Pin assignment conforms to the JEDEC byte-wide EEPROM standard.
• Package
SOP 32-pin (525 mil) plastic package:LE28CV1001M
TSOP 32-pin (8 * 20 mm) plastic package:LE28CV1001T


Pinout

Connection Diagram


Specifications

Parameter Symbol Ratings Unit Note
Supply voltage VCC 0.5 to +6.0 V 1
Input pin voltage VIN 0.5 to VCC + 0.5 V 1, 2
DQ pin voltage VOUT 0.5 to VCC + 0.5 V 1, 2
A9 pin voltage VA9 0.5 to +14.0 V 1, 3
Allowable power dissipation Pd max 600 mW 1, 4
Operating temperature Topr 0 to +70 1
Storage temperature Tstg 65 to +150 1
Notes:1. The device may be destroyed by the application of stresses in excess of the absolute maximum ratings.
           2. 1.0 V to VDD + 1.0 V for pulses less than 20 ns
           3. 1.0 V to +14 V for pulses less than 20 ns


Description

The LE28CV1001M, T Series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 3.3 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power, and ease of use. A 128-byte page rewrite function provides rapid data rewriting.




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