Features: ·High latch-up immunity.·Low switching loss and higher short-circuit withstanding capability.·Low temperature coefficient effect both for driver and IGBT.·Integrated driver IC to reduce the PCB size and layout effort.·High noise rejection capability.·Under-voltage lockout protection both...
LDIP-IPM IM13400: Features: ·High latch-up immunity.·Low switching loss and higher short-circuit withstanding capability.·Low temperature coefficient effect both for driver and IGBT.·Integrated driver IC to reduce th...
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·High latch-up immunity.
·Low switching loss and higher short-circuit withstanding capability.
·Low temperature coefficient effect both for driver and IGBT.
·Integrated driver IC to reduce the PCB size and layout effort.
·High noise rejection capability.
·Under-voltage lockout protection both for high and low side IGBT.
·High Vcc and Input signal port voltage rating.
·Good thermal performance.
·Matched propagation delay for three arms.
·Automatic shut-off the high and low side IGBT to avoid shoot-through conduction in case the driving signal is abnormal.
·Provided a fault signal (FO pin) and shut-off internal IGBT, when OC/SC and under-voltage situation are occurred.
Item | Symbol | Min. | Max. | Unit |
Between collector to emitter voltage | VCES | - | 600 | V |
Each IGBT collector current | ± IC ( Tc = 25 ) | - | 20 | A |
Each IGBT collector current (peak) | ± ICP ( Tc = 25, pulse ) | - | 40 | A |
Junction temperature | Tj | -20 | +150 |