Features: Extremely narrow half angleGaAs infrared emitting diode, fabricated in a liquid phase epitaxy processHigh reliability High pulse handling capability Available in groupsSame package as SFH 484ApplicationIR remote control of hi-fi and TV-sets, video tape recorders, dimmers, of various equi...
LD274: Features: Extremely narrow half angleGaAs infrared emitting diode, fabricated in a liquid phase epitaxy processHigh reliability High pulse handling capability Available in groupsSame package as SFH ...
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Bezeichnung Description |
Symbol Symbol |
Wert Value |
Einheit Unit |
Betriebs- und Lagertemperatur Operating and storage temperature range |
Top; Tstg |
55 ... + 100 |
°C |
Sperrschichttemperatur Junction temperature |
Tj |
100 |
°C |
Sperrspannung Reverse voltage |
VR |
5 |
V |
Durchlaßstrom Forward current |
IF |
100 |
mA |
Stoßstrom, t p=10 s, D = 0 Surge current |
IFSM |
3 |
A |
Verlustleistung Power dissipation |
Ptot |
165 |
mW |
Wärmewiderstand Thermal resistance |
RthJA |
450 |
K/W |